BSC061N08NS5 - MOSFET

Description

Features

Optimized for high performance SMPS, e. g. sync. rec.
100% avalanche tested.
Superior thermal resistance.
N-channel.
Qualified according to JEDEC1) for target.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	BSC061N08NS5
Manufacturer	Infineon
File Size	1.28 MB
Description	MOSFET
Datasheet	BSC061N08NS5 Datasheet
Additional preview pages of the BSC061N08NS5 datasheet.

📁 Similar Datasheet

BSC014N03LS - N-Channel 30V MOSFET (VBsemi)
BSC014N06NS - Power-Transistor (Infineon Technologies)
BSC016N03LSG - Power-Transistor (Infineon Technologies)
BSC016N04LSG - MOSFET (Infineon Technologies)
BSC017N04NSG - Power-Transistor (Infineon Technologies)
BSC019N02KSG - Power-Transistor (Infineon Technologies)
BSC019N04NSG - 40V MOSFET (Infineon Technologies)
BSC020N03LSG - MOSFET (Infineon Technologies)
BSC022N03 - OptiMOS2 Power-Transistor (Infineon Technologies AG)
BSC022N03S - OptiMOS2 Power-Transistor (Infineon Technologies AG)

Other Datasheets by Infineon

BSC060N10NS3 - Power-MOSFET
BSC060N10NS3G - Power-MOSFET
BSC060P03NS3E - Power-MOSFET
BSC060P03NS3EG - Power-MOSFET
BSC065N06LS5 - 60V MOSFET
BSC066N06NS - 60V MOSFET
BSC067N06LS3G - Power-MOSFET
BSC004NE2LS5 - MOSFET

Full PDF Text Transcription

Click to expand full text

BSC061N08NS5 MOSFET OptiMOSTM5Power-Transistor,80V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 6.1 mΩ ID 82 A Qoss 33 nC QG(0V..10V) 27 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC061N08NS5 Package PG-TDSON-8 Marking 061N08NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2019-11-04 OptiMOSTM5Power-Transistor,80V BSC061N08NS5 TableofContents Description . . . . . . . . . . . . .

Published: Feb 20, 2016 |