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BSC065N06LS5 - 60V MOSFET

General Description

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Key Features

  • Optimized for high performance SMPS, e. g. sync. rec.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel, logic level.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription for BSC065N06LS5 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BSC065N06LS5. For precise diagrams, and layout, please refer to the original PDF.

BSC065N06LS5 MOSFET OptiMOSTMPower-Transistor,60V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance...

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e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 6.5 mΩ ID 64 A QOSS 19 nC QG(0V..4.5V) 10 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC065N06LS5 Package PG-TDSON-8 Marking 065N06LS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2019-10-31 OptiMOSTMPower-Transistor,60V BSC065N06LS5 TableofConten

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