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Type
OptiMOSTM3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21
Type
BSC067N06LS3 G
BSC067N06LS3 G
Product Summary VDS RDS(on),max ID
60 V 6.7 mW 50 A
Package
PG-TDSON-8
Marking
067N06LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Value 50 50
Unit A
V GS=4.5 V, T C=25 °C
V GS=4.
BSC067N06LS3G Datasheet
