BSC070N10NS5
Description
inal Data Sheet 2 Rev.2.3,2019-11-13 OptiMOSTM5Power-Transistor,100V BSC070N10NS5 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Pulsed drain current2) Avalanche energy, single pulse3) Gate source voltage Power dissipation Operating and storage temperature ID ID,pulse EAS VGS Ptot Tj,Tstg Min.
Key Features
- OptimizedforhighperformanceSMPS,e.g.sync.rec
- 100%avalanchetested
- Superiorthermalresistance
- QualifiedaccordingtoJEDEC1)fortargetapplications
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
