Infineon Technologies BSC200P03LSG
Power-Transistor
| Part No. | BSC200P03LSG |
|---|---|
| Datasheet | BSC200P03LSG Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● P-Channel● Enhancement mode
● Logic level
● 150°C operating temperature Product Summary V DS R DS(on),max ID -30 20 -12.5 V mΩ A
● Avalanche rated; RoHS compliant
● Vgs=25V, specially suited for notebook applications
● Halogen-free according to IEC-61249-2-21 PG-TDSON-8 Type BSC200P03LS G Package PG-TDSON-8 Marking 200P03LS Lead free Yes Packing Dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C T A=25 °C1) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation I D,pulse E AS V GS P tot T C=25 °C T A=25 °C1) Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 T j, T stg JESD22-A114-HBM T C=25 °C2) I D=-12.5 A, R GS=25 Ω Value -12.5 -12.5 -9.9 -50 98 ±25 63 2.5 -55 ... 150 1B (500V-1kV) 260 °C 55/150/56 °C mJ V W Unit A Rev. 1.04 page 1 2009-02-18 BSC200P03LS G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area1) Values typ. max.
