Infineon Technologies BSC265N10LSFG
Power-Transistor
| Part No. | BSC265N10LSFG |
|---|---|
| Datasheet | BSC265N10LSFG Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
FEATURES
● N-channel, logic level● Very low gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 26.5 40 V mΩ A
● Ideal for high-frequency switching and synchronous rectification
● Low on-resistance R DS(on)
● Pb-free lead plating; RoHS compliant
● Qualified according to JEDEC1) for target application
● 150 °C operating temperature
● Halogen-free according to IEC61249-2-21 Type BSC265N10LSF G Package PG-TDSON-8 Marking 265N10LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=50 K/W 2) Pulsed drain current3) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=40 A, R GS=25 Ω Value 40 26 6.5 160 68 ±20 78 -55 ... 150 55/150/56 mJ V W °C Unit A Rev. 2.08 page 1 2009-11-04 BSC265N10LSF G Parameter Symbol Conditions min.
