Infineon Technologies BSO303
OptiMOS -P Small-Signal-Transistor
| Part No. | BSO303 |
|---|---|
| Datasheet | BSO303 Download |
| Manufacturer |  Infineon Technologies |
| Description | OptiMOS -P Small-Signal-Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -8.2 -6.6 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -32.4 97 -6 ±20 2 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-8.2 A , VDD =-25V, RGS =25Ω Reverse diode dv/dt IS =-8.2A, VDS =-24V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-08 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint, t < 10s @ 6 cm 2 cooling area 1) BSO303P Symbol min. RthJS RthJA - Values typ. max. 50 110 62.5 Unit K/WELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS...
