Infineon Technologies BSP123
Small-Signal Transistor
| Part No. | BSP123 |
|---|---|
| Datasheet | BSP123 Download |
| Manufacturer |  Infineon Technologies |
| Description | Small-Signal Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID TA=25°C TA=70°C Pulsed drain current TA=25°C Reverse diode dv/dt ID puls dv/dt IS=0.37A, VDS=80V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD Class JESD22-A114-HBM VGS Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Ptot Tj , Tstg Value 0.37 0.3 1.48 6 ±20 0 (<250V) 1.79 -55... +150 55/150/56 Unit A kV/µs V W °C Page 1 2010-06-22 Rev. 1.5 BSP123 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Symbol Values Unit min. typ. max. RthJS RthJA - 15 25 K/W - 100 115 - 51 70ELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=250µA Gate threshold voltage, VGS = VDS ID=50µA Zero gate voltage...
