Infineon Technologies BSP296
Small-Signal-Transistor
| Part No. | BSP296 |
|---|---|
| Datasheet | BSP296 Download |
| Manufacturer |  Infineon Technologies |
| Description | Small-Signal-Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C Pulsed drain current TA=25°C Reverse diode dv/dt ID ID puls dv/dt A 1.1 0.88 4.4 6 kV/µs IS=1.1A, VDS=80V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD (JESD22-A114-HBM) VGS ±20 V 1B (>500V, <1000V) Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Ptot Tj , Tstg 1.79 W -55... +150 °C 55/150/56 Page 1 2009-08-18 Thermal Characteristics Parameter Rev. 2.1 Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSP296 Symbol Values Unit min. typ. max. RthJS - - 25 K/W RthJA - - 115 - - 70ELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=250µA Gate threshold voltage, VGS = VDS ID=400µA Zero gate voltage...
