Infineon Technologies BSP317P
Small-Signal-Transistor
MAXIMUM RATINGS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID TA=25°C TA=70°C Pulsed drain current TA=25°C Reverse diode dv/dt ID puls dv/dt IS=-0.43A, VDS=-200V, di/dt=-200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj , Tstg ESD Class JESD22-A114-HBM Value -0.43 -0.34 -1.72 6 ±20 1.8 -55... +150 55/150/56 Class 1b Unit A kV/µs V W °C Rev.12..654 Page 1 20120402 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSP317P Symbol Values Unit min. typ. max. RthJS - 15 25 K/W RthJA - 80 115 - 48 70ELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V(BR)DSS -250 - -V VGS=0, ID=-250µA Gate threshold voltage, VGS =...