BSP319 Datasheet PDF

MAXIMUM RATINGS

Parameter Symbol Values Unit Continuous drain current TA = 29 ˚C ID A 3.8 DC drain current, pulsed TA = 25 ˚C IDpuls 15 EAS Avalanche energy, single pulse ID = 3.8 A, VDD = 25 V, RGS = 25 Ω L = 6.2 mH, Tj = 25 ˚C mJ 90 VGS Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA = 25 ˚C ± 20 Class 1 V Ptot W 1.8 Data Sheet 1 05.99 BSP 319

MAXIMUM RATINGS

Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Tj Tstg RthJA R thJS -55 ... + 150 -55 ... + 150 ˚C ≤ 70 ≤ 10 E 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

ELECTRICAL CHARACTERISTICS

, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25...