Infineon Technologies BSP324
Power-Transistor
| Part No. | BSP324 |
|---|---|
| Datasheet | BSP324 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power-Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID TA=25°C TA=70°C Pulsed drain current TA=25°C ID puls Reverse diode dv/dt dv/dt IS=0.17A, VDS=320V, di/dt=200A/µs, Tjmax=175°C Gate source voltage ESD Class (JESD22-A114-HBM) VGS Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Ptot Tj , Tstg Value Unit A 0.17 0.14 0.68 6 kV/µs ±20 V 1A (>250V, <500V) 1.8 W -55... +150 °C 55/150/56 Page 1 2012-11-29 Rev. 2.2 BSP324 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Symbol Values Unit min. typ. max. RthJS RthJA - 16 25 K/W - 85 115 - 45 70ELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=250µA Gate threshold voltage, VGS = VDS ID=94µA Zero ga...
