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BSP372 Datasheet PDF

Infineon Technologies BSP372

SIPMOS Small-Signal Transistor

Part No. BSP372
Datasheet BSP372 Download
Manufacturer
Infineon Technologies
Description SIPMOS Small-Signal Transistor
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BSP372 datasheet page 1 preview

MAXIMUM RATINGS

Parameter Symbol Values Unit Continuous drain current TA = 28 ˚C ID A 1.7 DC drain current, pulsed TA = 25 ˚C IDpuls 6.8 EAS Avalanche energy, single pulse ID = 1.7 A, VDD = 25 V, RGS = 25 Ω L = 23.3 mH, Tj = 25 ˚C mJ 45 VGS Vgs Ptot Gate source voltage Gate-source peak voltage,aperiodic Power dissipation TA = 25 ˚C ± 14 ± 20 V W 1.8 Data Sheet 1 05.99 BSP 372

MAXIMUM RATINGS

Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJS -55 ... + 150 -55 ... + 150 ˚C ≤ 70 ≤ 10 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

ELECTRICAL CHARACTERISTICS

, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C V (BR)DSS V 100 - Gate...
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