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BSS306N - Small-Signal-Transistor

Key Features

  • N-channel.
  • Enhancement mode.
  • Logic level (4.5V rated).
  • Avalanche rated.
  • Qualified according to AEC Q101.
  • 100% lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 57 93 2.3 A V mΩ PG-SOT23 3 1 2 Type BSS306N Package SOT23 Tape and Reel Information L6327: 3000 pcs/ reel Marking SWs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain curr.

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Datasheet Details

Part number BSS306N
Manufacturer Infineon
File Size 289.28 KB
Description Small-Signal-Transistor
Datasheet download datasheet BSS306N Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSS306N OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 57 93 2.3 A V mΩ PG-SOT23 3 1 2 Type BSS306N Package SOT23 Tape and Reel Information L6327: 3000 pcs/ reel Marking SWs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=2.3 A, R GS=25 Ω I D=2.3 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C Value 2.3 1.8 9 10.