Datasheet4U Logo Datasheet4U.com

BSS316N - Small-Signal-Transistor

Key Features

  • N-channel.
  • Enhancement mode.
  • Logic level (4.5V rated).
  • Avalanche rated.
  • Qualified according to AEC Q101.
  • 100%lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 160 280 1.4 A V mΩ PG-SOT23 3 1 2 Type BSS316N Package SOT23 Tape and Reel Information L6327: 3000 pcs/ reel Marking SYs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain cur.

📥 Download Datasheet

Datasheet Details

Part number BSS316N
Manufacturer Infineon
File Size 296.28 KB
Description Small-Signal-Transistor
Datasheet download datasheet BSS316N Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSS308PE P-Channel MOSFET VBsemi
BSS38 NPN SILICON TRANSISTOR Micro Electronics
BSS38 NPN SILICON TRANSISTOR Micro Electronics
BSS100 SIPMOS Small-Signal Transistor Siemens Semiconductor Group
BSS100 N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild Semiconductor

Other Datasheets by Infineon

Part Number Description
BSS314PE Small-Signal-Transistor
BSS315P P-Channel Transistor
BSS306N Small-Signal-Transistor
BSS308PE Small-Signal-Transistor
BSS340NW MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSS316N OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100%lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 160 280 1.4 A V mΩ PG-SOT23 3 1 2 Type BSS316N Package SOT23 Tape and Reel Information L6327: 3000 pcs/ reel Marking SYs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=1.4 A, R GS=25 Ω Value 1.4 1.1 5.6 3.7 mJ Unit A Reverse diode d v /dt dv /dt I D=1.