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BSZ018N04LS6 - MOSFET

General Description

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Key Features

  • Optimized for synchronous rectification.
  • Very low on-resistance RDS(on).
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21.
  • 175 °C rated Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSZ018N04LS6 MOSFET OptiMOSTM6Power-Transistor,40V Features •Optimizedforsynchronousrectification •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •175°Crated Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 1.8 mΩ ID 158 A Qoss 34 nC QG(0V..10V) 31 nC QG(0V..4.5V) 15 nC TSDSON-8FL (enlarged source interconnection) S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSZ018N04LS6 Package PG-TSDSON-8 FL Marking 18N04L6 RelatedLinks - Final Data Sheet 1 Rev.2.