Datasheet Summary
MOSFET
OptiMOSTM6Power-Transistor,40V
Features
- Optimizedforsynchronousrectification
- Verylowon-resistanceRDS(on)
- 100%avalanchetested
- Superiorthermalresistance
- N-channel
- Pb-freeleadplating;RoHSpliant
- Halogen-freeaccordingtoIEC61249-2-21
- 175°Crated
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 40
RDS(on),max
1.8 mΩ
ID 158 A
Qoss
34 nC
QG(0V..10V)
31 nC
QG(0V..4.5V)
15 nC
TSDSON-8FL
(enlarged source interconnection)
S1 8D S2 7D S3 6D G4...