BSZ0503NSI - MOSFET

Infineon

Key Features

Optimized for high performance buck converters.
Monolithic integrated Schottky-like diode.
Very low on-resistance RDS(on) @ VGS=4.5 V.
100% avalanche tested.
N-channel.
Qualified according to JEDEC1) for target.

BSZ0503NSI mosfet by Infineon - Datasheet Preview

Datasheet Details

Part number	BSZ0503NSI
Manufacturer	Infineon
File Size	1.58 MB
Description	MOSFET
Datasheet	BSZ0503NSI Datasheet

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-MOSFET,30V BSZ0503NSI DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 3.4 mΩ ID 40 A QOSS 10.6 nC QG(0V..4.5V) 7.