BSZ0909ND
Key Features
- DualN-channelOptiMOS™MOSFET
- Enhancementmode
- Logiclevel(4.5Vrated)
- Avalancherated
- 100%Lead-free;RoHScompliant
- Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 18 mΩ ID 20 A QOSS
- 3 nC QG(0V..4.5V)
- 8 nC PowerStage3x3 Type/OrderingCode BSZ0909ND Package PG-WISON-8 Marking 0909ND RelatedLinks - Final Data Sheet 1 Rev.2.0,2016-12-05 PowerStage3x3
