Datasheet4U Logo Datasheet4U.com

BTS133TC - Smart Low Side Power Switch

Description

N channel vertical power FET in Smart SIPMOS® chip on chip technology.

Providing embedded protection functions.

Features

  • Logic Level Input.
  • Input Protection (ESD).
  • =Thermal shutdown with latch.
  • Short circuit and Overload protection.
  • Overvoltage protection.
  • Current limitation.
  • Status feedback with external input resistor.
  • Analog driving possible.
  • AEC qualified.
  • Green product (RoHS compliant) Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) I D(lim) I D(IS.

📥 Download Datasheet

Datasheet preview – BTS133TC

Datasheet Details

Part number BTS133TC
Manufacturer Infineon
File Size 246.74 KB
Description Smart Low Side Power Switch
Datasheet download datasheet BTS133TC Datasheet
Additional preview pages of the BTS133TC datasheet.

📁 Similar Datasheet

  • BTS133 - Smart Lowside Power Switch (Siemens Semiconductor Group)
  • BTS133 - Smart Low Side Power Switch (Infineon Technologies AG)
  • BTS130 - MOSFET (Siemens Semiconductor Group)
  • BTS130 - MOSFET (Infineon Technologies AG)
  • BTS131 - MOSFET (Siemens Semiconductor Group)
  • BTS131 - MOSFET (Infineon Technologies AG)
  • BTS132 - MOSFET (Siemens Semiconductor Group)
  • BTS132 - MOSFET (Infineon Technologies AG)
  • BTS134D - Smart Lowside Power Switch (Infineon Technologies AG)
  • BTS100 - Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic) (Siemens Semiconductor Group)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
Smart Low Side Power Switch HITFET BTS 133TC Features • Logic Level Input • Input Protection (ESD) •=Thermal shutdown with latch • Short circuit and Overload protection • Overvoltage protection • Current limitation • Status feedback with external input resistor • Analog driving possible • AEC qualified • Green product (RoHS compliant) Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) I D(lim) I D(ISO) EAS 60 V 50 mΩ 21 A 7A 2000 mJ Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • μC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPM
Published: |