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BTS3035TF - Smart Low-Side Power Switch

General Description

The BTS3035TF is a 35 mΩ single channel Smart Low-Side Power Switch within a PG-TO252-3 package providing embedded protective functions.

The power transistor is built by an N-channel vertical power MOSFET.

The device is monolithically integrated.

Key Features

  • Single channel device.
  • Very low output leakage current in OFF state.
  • Electrostatic discharge protection (ESD).
  • Embedded protection functions (see below).
  • Green Product (RoHS compliant).
  • AEC Qualified.

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Datasheet Details

Part number BTS3035TF
Manufacturer Infineon
File Size 838.15 KB
Description Smart Low-Side Power Switch
Datasheet download datasheet BTS3035TF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HITFET - BTS3035TF Smart Low-Side Power Switch 1 Overview Basic Features • Single channel device • Very low output leakage current in OFF state • Electrostatic discharge protection (ESD) • Embedded protection functions (see below) • Green Product (RoHS compliant) • AEC Qualified Applications • Suitable for resistive, inductive and capacitive loads • Replaces electromechanical relays, fuses and discrete circuits Description The BTS3035TF is a 35 mΩ single channel Smart Low-Side Power Switch within a PG-TO252-3 package providing embedded protective functions. The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3035TF is automotive qualified and is optimized for 12 V automotive applications.