Infineon Technologies BTS3410G
Smart Dual Lowside Power Switch
FEATURES
● Logic Level Input● Input Protection (ESD)
● Thermal shutdown with auto restart
● Green product (RoHS compliant)
● Overload protection
● Short circuit protection
● Overvoltage protection
● Current limitation
● Analog driving possible Product Summary Drain source voltage VDS 42 V On-state resistance RDS(on) 200 mW Nominal load current ID(Nom) 1.3 A Clamping energy EAS 150 mJ Application
● All kinds of resistive, inductive and capacitive loads in switching or linear applications
● µC compatible power switch for 12 V DC applications
● Replaces electromechanical relays and discrete circuits
GENERAL DESCRIPTION
N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded protection functions. Vbb HITFET â In1 Pin 2 Logic Channel 1 Drain1 Pin 7and 8 Source1 Pin 1 M In2 Pin 4 Logic Channel 2 Drain2 Pin 5and 6 Source2 Pin 3 Complete product spectrum and additional information Datasheet 1 Rev. 1.3, 2007-11-06 Smart Low Side Power Switch HITFET BTS 3410G Pin D...