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BUZ21L Datasheet PDF

Infineon Technologies BUZ21L

Power Transistor

Part No. BUZ21L
Datasheet BUZ21L Download
Manufacturer
Infineon Technologies
Description Power Transistor
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BUZ21L datasheet page 1 preview

MAXIMUM RATINGS

Parameter Symbol Values Unit Continuous drain current ID 21 A TC = 25 ˚C Pulsed drain current IDpuls 84 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 21 11.5 mJ ID = 21 A, VDD = 25 V, RGS = 25 Ω L = 340 µH, Tj = 25 ˚C Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation 100 VGS ± 20 Class 1 V Ptot 75 W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 1.67 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 21L

ELECTRICAL CHARACTERISTICS

, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V(BR)DSS 100 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 1.2 1.6 2 µA 0.1 10 1...
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