Datasheet Summary
SIPMOS ® Power Transistor
BUZ 30A H
- N channel
- Enhancement mode
- Avalanche-rated
. Halogen-free according to IEC61249-2--21
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 30A H
VDS 200 V
ID 21 A
RDS(on)
0.13 Ω
Maximum Ratings Parameter Continuous drain current TC = 26 ˚C Pulsed drain current TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
ID = 21 A, VDD = 50 V, RGS = 25 Ω
L = 1.53 mH, Tj = 25 ˚C Gate source voltage Power dissipation TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC...
