Infineon Technologies BUZ30AH
Power Transistor
| Part No. | BUZ30AH |
|---|---|
| Datasheet | BUZ30AH Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Continuous drain current TC = 26 ˚C Pulsed drain current TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 21 A, VDD = 50 V, RGS = 25 Ω L = 1.53 mH, Tj = 25 ˚C Gate source voltage Power dissipation TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Package PG-TO-220-3 Pb-free Yes Symbol ID IDpuls IAR EAR EAS VGS Ptot Tj Tstg RthJC RthJA Values 21 84 21 12 Unit A mJ 450 ± 20 125 -55 ... + 150 -55 ... + 150 ≤1 75 E 55 / 150 / 56 V W ˚C K/W Rev. 2.5 Page 1 2010-07-02 BUZ 30A HELECTRICAL CHARACTERISTICS
, at Tj = 25˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID = 13.5 A Symbol min.
