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BUZ350 Datasheet PDF

Infineon Technologies BUZ350

Power Transistor

Part No. BUZ350
Datasheet BUZ350 Download
Manufacturer
Infineon Technologies
Description Power Transistor
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BUZ350 datasheet page 1 preview

MAXIMUM RATINGS

Parameter Symbol Values Unit Continuous drain current TC = 33 ˚C ID A 22 Pulsed drain current TC = 25 ˚C IDpuls 88 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 22 A, VDD = 50 V, RGS = 25 Ω L = 1.39 mH, Tj = 25 ˚C 22 12 mJ 450 VGS Ptot Gate source voltage Power dissipation TC = 25 ˚C ± 20 125 V W Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤1 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 350

ELECTRICAL CHARACTERISTICS

, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 200 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current VDS...
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