BUZ61A Datasheet PDF

MAXIMUM RATINGS

Parameter Symbol Values Unit Continuous drain current TC = 27 °C ID A 11 Pulsed drain current TC = 25 °C IDpuls 44 IAR E AR E AS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 6.38 mH, Tj = 25 °C 12.5 13 mJ 570 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 150 V W Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 °C ≤ 0.83 75 E 55 / 150 / 56 K/W Semiconductor Group 1 07/96 BUZ 61 A

ELECTRICAL CHARACTERISTICS

, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 400 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate...