Infineon Technologies BUZ72L
Power Transistor
| Part No. | BUZ72L |
|---|---|
| Datasheet | BUZ72L Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Symbol Values Unit Continuous drain current TC = 25 ˚C ID A 10 Pulsed drain current TC = 25 ˚C IDpuls 40 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 10 A, VDD = 25 V, RGS = 25 Ω L = 885 µH, Tj = 25 ˚C 10 7.9 mJ 59 VGS Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation TC = 25 ˚C ± 20 Class 1 V Ptot W 40 Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 3.1 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 72LELECTRICAL CHARACTERISTICS
, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 100 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 1.2...
