C165 Overview
Key Specifications
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V
- Low Gate Charge (typical 43 nC)
- Low Crss (typical 20pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- Fast Recovery Body Diode (typical 90ns) TM
