Datasheet Summary
FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET
July 2005
FRFET
FQP11N50CF/FQPF11N50CF
500V N-Channel MOSFET
Features
- 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V
- Low Gate Charge (typical 43 nC)
- Low Crss (typical 20pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- Fast Recovery Body Diode (typical 90ns)
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices...
