Infineon Technologies CFH800
P-HEMT
FEATURES
● Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications (F = 0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8GHz)● Low cost miniature package SOT343
● LG = 0.4µm; WG = 800µm
● Tape and Reel packaging ESD: Electrostatic discharge sensitive device, observe handling precautions! Pin assignment: 1 = gate 2 = source 3 = drain 4 = source Type CFH 800 Marking N8s Ordering code (taped) on request Package 1) SOT343 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < tbd°C) 2) Symbol VDS VDG VGS ID TCh Tstg Ptot Thermal resistance Channel-soldering point source RthChS 1) Dimensions see page 7 2) TS: Temperature measured at soldering point 5.5 6.5 -