Infineon Technologies CLY38-10
HiRel C-Band GaAs Power-MESFET
| Part No. | CLY38-10 |
|---|---|
| Datasheet | CLY38-10 Download |
| Manufacturer |  Infineon Technologies |
| Description | HiRel C-Band GaAs Power-MESFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Gate forward current Compression Level 1) Operation Range 1 Symbol VDS VDG VGS ID IG PC Values 14 16 -6 5.6 32 1.5 at VDS ≤ 9 V 2.5 at VDS ≤ 8 V 3.5 at VDS ≤ 7 V Unit V V V A mA dB Compression Level 2) Operation Range 2 Compression Level 3) Operation Range 3 Junction temperature Storage temperature range Total power dissipation 4) PC PC TJ Tstg Ptot Tsol 3.5 at VDS ≤ 7 V tbd. 175 - 65...+ 175 30 230 dB dB °C °C W °C Soldering temperature 5) Thermal Resistance Junction-soldering point Notes.: Rth JS ≤ 4.5 K/W 1) Operation Range 1: 930 mA ≤ ID ≤ 1860 mA 2) Operation Range 2: ID > 1860 mA 3) Operation Range 3: ID < 930 mA 4) At TS = + 40 °C. For TS > + 40 °C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 10 Draft D, September 99 CLY38ELECTRICAL CHARACTERISTICS
(at TA=25°C; unless otherwise specified) Parameter Symbol min.
