CY15B104QN
Overview
- 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced high-reliability ferroelectric process
- Fast serial peripheral interface (SPI) - Up to 50 MHz frequency - Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
- Sophisticated write protection scheme - Hardware protection using the Write Protect (WP) pin - Software protection using Write Disable (WRDI) instruction - Software block protection for 1/4, 1/2, or entire array
- Device ID and serial number - Device ID includes manufacturer ID and product ID - Unique ID - Serial number
- Dedicated 256-byte special sector F-RAM - Dedicated special sector write and read - Stored content can survive up to 3 standard reflow soldering cycles
- Low-power consumption - 400 µA (typ) active current at 1 MHz - 3.7 mA (typ) active current at 40 MHz - 2.7 µA (typ) standby current - 1.1 µA (typ) Deep Power Down mode current - 0.1 µA (typ) Hibernate mode current
- Low-voltage operation: - CY15V104QN: VDD = 1.71 V to 1.89 V - CY15B104QN: VDD = 1.8 V to 3.6 V
- Automotive-A operating temperature: -40°C to +85°C
- AEC-Q100 grade 3 compliant
- 8-pin small outline integrated circuit (SOIC) package
