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CYEL17B512 - 512Mb radiation tolerant NOR flash

Description

The CYEL17B family devices are flash non-volatile memory products using: Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) charge trap gate technology

40-nm process lithography The CYEL17B family connects to a host system via a Serial Peripheral Interface (SPI).

Features

  • a page programming buffer that allows up to 2 KB to be programmed in one operation and provides individual 1 MB sector, 8 MB block, or entire 64 MB chip erase. By using CYEL17B family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous NOR flash memories while reducing signal count dramatically. The CYEL17B family products offer high densities coupled with the flexibility and fast per.

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Datasheet Details

Part number CYEL17B512
Manufacturer Infineon
File Size 1.16 MB
Description 512Mb radiation tolerant NOR flash
Datasheet download datasheet CYEL17B512 Datasheet

Full PDF Text Transcription (Reference)

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CYEL17B512 512 Mb radiation tolerant NOR flash Serial (QSPI), 3.3 V General description The CYEL17B family devices are flash non-volatile memory products using: • Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) charge trap gate technology • 40-nm process lithography The CYEL17B family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single-bit serial input and output is supported as well as optional four-bit wide Quad I/O (QIO) and Quad Peripheral Interface (QPI) commands. The architecture features a page programming buffer that allows up to 2 KB to be programmed in one operation and provides individual 1 MB sector, 8 MB block, or entire 64 MB chip erase.
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