D1065C5 Datasheet | Infineon

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW10G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more pact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to plement our 650V CoolMOS™ families: this ensures meeting the most stringent application...