D1265C6 Description
IDDD12G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation G is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower...
D1265C6 Key Features
- Best in class forward voltage (1.25 V)
- Best in class figure of merit (Qc x VF)
- High dv/dt ruggedness (150 V/ns)
- System efficiency improvement
- System cost and size savings due to the reduced cooling requirements
- Enabling higher frequency and increased power density