DD1200S17H4_B2 Description
TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD1200S17H4_B2 IHM-BModul IHM-Bmodule TypischeAnwendungen 3-Level-Applikationen AktiverEingang(Rückspeisung) Hochleistungsumrichter Multi-LevelUmrichter Traktionsumrichter.
DD1200S17H4_B2 Key Features
- ExtendedoperatingtemperatureTvjop
- Highcurrentdensity
- Tvjop=150°C
- 4kVAC1mininsulation
- AlSiC base plate for increased thermal cycling
- PackagewithCTI>400
- Highcreepageandclearancedistances
- Highpowerandthermalcyclingcapability
- Highpowerdensity
- IHMBhousing