• Part: DD800S45KL3_B5
  • Description: IGBT
  • Manufacturer: Infineon
  • Size: 408.82 KB
DD800S45KL3_B5 Datasheet (PDF) Download
Infineon
DD800S45KL3_B5

Key Features

  • HighDCstability
  • Highdynamicrobustness
  • Highsurgecurrentcapability MechanicalFeatures
  • AlSiC base plate for increased thermal cycling capability
  • PackagewithCTI>600
  • Package with enhanced insulation of 10.4kV AC 10s
  • Highcreepageandclearancedistances ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V3.1 2018-01-15 DD800S45KL3_B5 Diode,Wechselrichter/Diode,Inverter HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage Tvj = 125°C Tvj = 25°C Tvj = -40°C Dauergleichstrom ContinuousDCforwardcurrent PeriodischerSpitzenstrom Repetitivepeakforwardcurrent tP = 1 ms Grenzlastintegral I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C Spitzenverlustleistung Maximumpowerdissipation Tvj = 125°C Mindesteinschaltdauer Minimumturn-ontime VRRM  IF  IFRM  I²t  PRQM  ton min