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DF160R12W2H3F_B11 - IGBT

Key Features

  • CoolSiC (TM) Schottky diode gen 5.
  • High speed IGBT H3.
  • Low switching losses.
  • thinQH SiC Schottky diode 1200V Mechanical Features.
  • 3 kV AC 1min insulation.
  • Al2O3 substrate with low thermal resistance.
  • Integrated NTC temperature sensor.
  • Compact design.
  • PressFIT contact technology Module Label Code Barcode Code 128 DMX - Code Content of the Code Module Serial Number Module Material Number Production Order Number Da.

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DF160R12W2H3F_B11 EasyPACKModulmitschnellemTrench/FeldstoppHigh-Speed3IGBTundSiCDiodeundPressFIT/NTC EasyPACKmodulewithfastTrench/FieldstopHigh-Speed3IGBTandSiCdiodeandPressFIT/NTC TypischeAnwendungen • SolarAnwendungen ElektrischeEigenschaften • CoolSiC(TM)SchottkyDiodeGen5 • HighSpeedIGBTH3 • NiedrigeSchaltverluste • thinQHSiCSchottky-Diode1200V MechanischeEigenschaften • 3kVAC1minIsolationsfestigkeit • Al2O3 Substrat mit kleinem thermischen Widerstand • IntegrierterNTCTemperaturSensor • KompaktesDesign • PressFITVerbindungstechnik J VCES = 1200V IC nom = 160A / ICRM = 320A TypicalApplications • Solarapplications ElectricalFeatures • CoolSiC(TM)Schottkydiodegen5 • HighspeedIGBTH3 • Lowswitchinglosses • thinQHSiCSchot