DF75R12W1H4F_B11
Features
- Cool Si C(TM)Schottkydiodegen5
- Lowswitchinglosses
Mechanical Features
- 3k VAC1mininsulation
- Al2O3substratewithlowthermalresistance
- Integrated NTCtemperaturesensor
- pactdesign
- Press FITcontacttechnology
Module Label Code
Barcode Code128
DMX-Code
Contentofthe Code Module Serial Number Module Material Number Production Order Number Datecode(Production Year) Datecode(Production Week)
Digit 1-5 6-11 12-19 20-21 22-23
Datasheet .infineon.
Pleasereadthe Important Noticeand Warningsattheendofthisdocument
V3.2 2017-03-31
Bypass-Diode/Bypass-Diode
Höchstzulässige Werte/Maximum Rated Values
Periodische Spitzensperrspannung Repetitivepeakreversevoltage
Tvj = 25°C
Durchlassstrom Grenzeffektivwertpro Chip Maximum RMSforwardcurrentperchip
TH = 100°C
Gleichrichter Ausgang Grenzeffektivstrom Maximum RMScurrentatrectifieroutput
TH = 100°C
Stoßstrom Grenzwert Surgeforwardcurrent tp = 10...
