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DF75R12W1H4F_B11 - IGBT

Datasheet Summary

Features

  • CoolSiC (TM) Schottky diode gen 5.
  • Low switching losses Mechanical Features.
  • 3 kV AC 1min insulation.
  • Al2O3 substrate with low thermal resistance.
  • Integrated NTC temperature sensor.
  • Compact design.
  • PressFIT contact technology Module Label Code Barcode Code 128 DMX - Code Content of the Code Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit 1 - 5 6 - 1.

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Datasheet preview – DF75R12W1H4F_B11

Datasheet Details

Part number DF75R12W1H4F_B11
Manufacturer Infineon
File Size 693.08 KB
Description IGBT
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DF75R12W1H4F_B11 EasyPACKModulundPressFIT/NTC EasyPACKmoduleandPressFIT/NTC J TypischeAnwendungen • SolarAnwendungen ElektrischeEigenschaften • CoolSiC(TM)SchottkyDiodeGen5 • NiedrigeSchaltverluste MechanischeEigenschaften • 3kVAC1minIsolationsfestigkeit • Al2O3 Substrat mit kleinem thermischen Widerstand • IntegrierterNTCTemperaturSensor • KompaktesDesign • PressFITVerbindungstechnik VCES = 1200V IC nom = 75A / ICRM = 150A TypicalApplications • Solarapplications ElectricalFeatures • CoolSiC(TM)Schottkydiodegen5 • Lowswitchinglosses MechanicalFeatures • 3kVAC1mininsulation • Al2O3substratewithlowthermalresistance • IntegratedNTCtemperaturesensor • Compactdesign • PressFITcontacttechnology ModuleLabelCode BarcodeCode128 DMX-Cod
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