DF80R07W1H5FP_B11 - IGBT

Infineon

Key Features

CoolSiCTM Schottky diode gen 5.
Increased blocking voltage capability up to 650V.
Low inductive design.
Low switching losses Mechanical Features.
Al2O3 substrate with low thermal resistance.
Integrated NTC temperature sensor.
PressFIT contact technology.
Pre-applied Thermal Interface Material Module Label Code Barcode Code 128 DMX - Code Content of the Code Module Serial Number Module Material Number Production Order Numb.

DF80R07W1H5FP_B11 igbt by Infineon - Datasheet Preview

Datasheet Details

Part number	DF80R07W1H5FP_B11
Manufacturer	Infineon
File Size	681.79 KB
Description	IGBT
Datasheet	DF80R07W1H5FP_B11 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DF80R07W1H5FP_B11 EasyPACK™ModulmitTRENCHSTOP™5H5undCoolSiC™SchottkyDiodeundPressFIT/bereits aufgetragenemThermalInterfaceMaterial EasyPACK™modulewithTRENCHSTOP™5H5andCoolSiC™SchottkydiodeandPressFIT/pre-applied ThermalInterfaceMaterial J PotentielleAnwendungen • SolarAnwendungen ElektrischeEigenschaften • CoolSiCTMSchottkyDiodeGen5 • ErhöhteSperrspannungsfestigkeitauf650V • NiederinduktivesDesign • NiedrigeSchaltverluste MechanischeEigenschaften • Al2O3 Substrat mit kleinem thermischen Widerstand • IntegrierterNTCTemperaturSensor • PressFITVerbindungstechnik • Thermisches Interface Material bereits aufgetragen VCES = 650V IC nom = 40A / ICRM = 80A PotentialApplications • Solarapplications ElectricalFeatures • CoolSiCTMSchottkydiodeg