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DF80R07W1H5FP_B11 - IGBT

Features

  • CoolSiCTM Schottky diode gen 5.
  • Increased blocking voltage capability up to 650V.
  • Low inductive design.
  • Low switching losses Mechanical Features.
  • Al2O3 substrate with low thermal resistance.
  • Integrated NTC temperature sensor.
  • PressFIT contact technology.
  • Pre-applied Thermal Interface Material Module Label Code Barcode Code 128 DMX - Code Content of the Code Module Serial Number Module Material Number Production Order Numb.

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Datasheet preview – DF80R07W1H5FP_B11

Datasheet Details

Part number DF80R07W1H5FP_B11
Manufacturer Infineon
File Size 681.79 KB
Description IGBT
Datasheet download datasheet DF80R07W1H5FP_B11 Datasheet
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Full PDF Text Transcription

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DF80R07W1H5FP_B11 EasyPACK™ModulmitTRENCHSTOP™5H5undCoolSiC™SchottkyDiodeundPressFIT/bereits aufgetragenemThermalInterfaceMaterial EasyPACK™modulewithTRENCHSTOP™5H5andCoolSiC™SchottkydiodeandPressFIT/pre-applied ThermalInterfaceMaterial J PotentielleAnwendungen • SolarAnwendungen ElektrischeEigenschaften • CoolSiCTMSchottkyDiodeGen5 • ErhöhteSperrspannungsfestigkeitauf650V • NiederinduktivesDesign • NiedrigeSchaltverluste MechanischeEigenschaften • Al2O3 Substrat mit kleinem thermischen Widerstand • IntegrierterNTCTemperaturSensor • PressFITVerbindungstechnik • Thermisches Interface Material bereits aufgetragen VCES = 650V IC nom = 40A / ICRM = 80A PotentialApplications • Solarapplications ElectricalFeatures • CoolSiCTMSchottkydiodeg
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