DF80R12W2H3F_B11 - IGBT

Infineon

Key Features

CoolSiC (TM) Schottky diode gen 5.
High speed IGBT H3.
Low switching losses Mechanical Features.
3 kV AC 1min insulation.
Al2O3 substrate with low thermal resistance.
Integrated NTC temperature sensor.
Compact design.
PressFIT contact technology Module Label Code Barcode Code 128 DMX - Cod.

DF80R12W2H3F_B11 igbt by Infineon - Datasheet Preview

Datasheet Details

Part number	DF80R12W2H3F_B11
Manufacturer	Infineon
File Size	614.72 KB
Description	IGBT
Datasheet	DF80R12W2H3F_B11 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DF80R12W2H3F_B11 EasyPACKModulmitschnellemTrench/FeldstoppHigh-Speed3IGBTundSiCDiodeundPressFIT/NTC EasyPACKmodulewithfastTrench/FieldstopHigh-Speed3IGBTandSiCdiodeandPressFIT/NTC TypischeAnwendungen • SolarAnwendungen ElektrischeEigenschaften • CoolSiC(TM)SchottkyDiodeGen5 • HighSpeedIGBTH3 • NiedrigeSchaltverluste MechanischeEigenschaften • 3kVAC1minIsolationsfestigkeit • Al2O3 Substrat mit kleinem thermischen Widerstand • IntegrierterNTCTemperaturSensor • KompaktesDesign • PressFITVerbindungstechnik J VCES = 1200V IC nom = 80A / ICRM = 160A TypicalApplications • Solarapplications ElectricalFeatures • CoolSiC(TM)Schottkydiodegen5 • HighspeedIGBTH3 • Lowswitchinglosses MechanicalFeatures • 3kVAC1mininsulation • Al2O3su