Datasheet Details
| Part number | ESD3V3XU1BL |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.24 MB |
| Description | TVS Diode |
| Datasheet |
 ESD3V3XU1BL Datasheet
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General Description
P G-TS LP-2_Dual_Diode_S erie_P inConf_and_S chematicDiag.
Key Features
- ESD / transient protection of high speed data lines exceeding.
- IEC61000-4-2 (ESD): ±20 kV (air / contact).
- IEC61000-4-4 (EFT): ±2.5 kV / ±50 A (5/50 ns).
- IEC61000-4-5 (surge): ±3 A (8/20 μs).
- Maximum working voltage: VRWM = ±3.6 V.
- Ultra low capacitance CL = 0.20 pF (typical) at f = 1 GHz.
- Very low clamping voltage: VCL = 14 V at ITLP = 16 A (typical) according to TLP [1].
- Very low dynamic resistance: RDYN = 0.45 Ω (typical.