Datasheet4U Logo Datasheet4U.com

F12-25R12KT4G - IGBT

📥 Download Datasheet

Datasheet preview – F12-25R12KT4G

Datasheet Details

Part number F12-25R12KT4G
Manufacturer Infineon
File Size 504.60 KB
Description IGBT
Datasheet download datasheet F12-25R12KT4G Datasheet
Additional preview pages of the F12-25R12KT4G datasheet.

📁 Similar Datasheet

  • F1200A - Fast Efficient Rectifier Diodes (Diotec)
  • F1200A - High efficiency fast silicion rectifier diode (Semikron)
  • F1200A - FAST RECOVERY RECTIFIER DIODES (EIC)
  • F1200B - Fast Efficient Rectifier Diodes (Diotec)
  • F1200B - High efficiency fast silicion rectifier diode (Semikron)
  • F1200D - Fast Efficient Rectifier Diodes (Diotec)
  • F1200D - High efficiency fast silicion rectifier diode (Semikron)
  • F1200D - FAST RECOVERY RECTIFIER DIODES (EIC)
  • F1200G - Fast Efficient Rectifier Diodes (Diotec)
  • F1200G - High efficiency fast silicion rectifier diode (Semikron)
Other Datasheets by Infineon

    Full PDF Text Transcription

    Click to expand full text
    TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F12-25R12KT4G EconoPACK™3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode EconoPACK™3modulewithtrench/fieldstopIGBT4andEmitterControlled4Diode IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues VorläufigeDaten PreliminaryData Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES  1200 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C IC nom  25 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM  50 A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot  160 W Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltag
    Published: |