F3L100R07W2E3_B11 - IGBT-Module

Features

Increased blocking voltage capability to 650V.
Low inductive design.
Low Switching Losses.
Low VCEsat Mechanical Features.
Al2O3 Substrate with Low Thermal Resistance.
Compact design.
PressFIT Contact Technology.
Rugged mounting due to integrated mounting clamps Module Label Code Barcode Code 128 DMX - Code prepared by: DK approved by: MB Content of the Code Module Serial Number Module Material Number Production Order Num.

Infineon

Datasheet Details

Part number	F3L100R07W2E3_B11
Manufacturer	Infineon
File Size	819.60 KB
Description	IGBT-Module
Datasheet	F3L100R07W2E3_B11 Datasheet
Additional preview pages of the F3L100R07W2E3_B11 datasheet.

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Full PDF Text Transcription

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TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F3L100R07W2E3_B11 EasyPACKModulmitTrench/FeldstoppIGBT3undEmitterControlled3DiodeundPressFIT/NTC EasyPACKmodulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandPressFIT/NTC VorläufigeDaten/PreliminaryData J TypischeAnwendungen • 3-Level-Applikationen • Motorantriebe • SolarAnwendungen • USV-Systeme ElektrischeEigenschaften • ErhöhteSperrspannungsfestigkeitauf650V • NiederinduktivesDesign • NiedrigeSchaltverluste • NiedrigesVCEsat MechanischeEigenschaften • Al2O3 Substrat mit kleinem thermischen Widerstand • KompaktesDesign • PressFITVerbindungstechnik • Robuste Montage durch integrierte Befestigungsklammern VCES = 650V IC nom = 100A / ICRM = 200A TypicalApplications

Published: Apr 11, 2020 |