Part F3L100R07W2E3_B11
Description IGBT-Module
Manufacturer Infineon
Size 819.60 KB
Infineon
F3L100R07W2E3_B11

Overview

  • Increasedblockingvoltagecapabilityto650V
  • Lowinductivedesign
  • LowSwitchingLosses
  • LowVCEsat MechanicalFeatures
  • Al2O3SubstratewithLowThermalResistance
  • Compactdesign
  • PressFITContactTechnology
  • Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode128 DMX-Code preparedby:DK approvedby:MB ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 dateofpublication:2013-11-05 revision:2.1 ULapproved(E83335) 1 TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F3L100R07W2E3_B11 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 60°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent