Part F3L150R12W2H3_B11
Description IGBT
Manufacturer Infineon
Size 0.97 MB
Infineon
F3L150R12W2H3_B11

Overview

  • HighSpeedIGBTH3
  • LowSwitchingLosses
  • Tvjop=150°C MechanicalFeatures
  • PressFITContactTechnology
  • RoHScompliant ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CM approvedby:AKDA ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 dateofpublication:2014-11-26 revision:3.0 ULapproved(E83335) 1 TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module F3L150R12W2H3_B11 IGBT,T1/T4/IGBT,T1/T4 HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C ImplementierterKollektor-Strom Implementedcollectorcurrent Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VCES  ICN  IC nom  ICRM  Ptot  VGES