F3L500R12W3H7_H11 Description
Datasheet .infineon. 04 |nderung des Bohrbildes Please read the sections "Import0a3nt noLtaicyeo"uatndnd"Weraurnngingasl"taVt t5h.e7enneduofVth7i.s3document 02 Layoutnderung, Zwei Pine (P1,N1) pro Substrat hinzu steimark steim Rebvisiskioonpi1n.0g0m.
F3L500R12W3H7_H11 Key Features
- Electrical features
- VCES = 1200 V
- IC nom = 500 A / ICRM = 1000 A
- Ultra fast IGBT chips
- Low ind-ucDtievteadilessiganbout hole specification for contacts refer to AN2009-01 chapter 2
- Low sw-itcDhiinagmleotsesress of drill P1,15mm
- Low VCE-,saCt opper thickness in hole 25~50um
- Suitable Infineon gate drivers can be found under https://.infineon./gdfinder
- Mechanical features
- 3.2 kV AC 1 minute insulation