FF2000UXTR33T2M1 Key Features
- Electrical features
- VDSS = 3300 V
- IDN = 1000 A / IDRM = 2000 A
- Tvj,op = 175°C
- Low switching losses
- High current density
- Low inductive design
- Mechanical features
- High power density
- Package with CTI > 600
- Part: FF2000UXTR33T2M1
- Description: MOSFET
- Manufacturer: Infineon
- Size: 687.16 KB
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