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FF2000UXTR33T2M1 - MOSFET

General Description

- Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2024-04-16 FF2000UXTR33T2M1 XHP™2 module Table of contents Table of contents Description

Key Features

  • Electrical features - VDSS = 3300 V - IDN = 1000 A / IDRM = 2000 A - Tvj,op = 175°C - Low switching losses - High current density - Low inductive design.
  • Mechanical features - High power density - Package with CTI > 600 - High creepage and clearance distances - AlSiC base plate for increased thermal cycling capability - AlN substrate with low thermal resistance Potential.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FF2000UXTR33T2M1 XHP™2 module Final datasheet XHP™2 module with CoolSiC™ Trench MOSFET Features • Electrical features - VDSS = 3300 V - IDN = 1000 A / IDRM = 2000 A - Tvj,op = 175°C - Low switching losses - High current density - Low inductive design • Mechanical features - High power density - Package with CTI > 600 - High creepage and clearance distances - AlSiC base plate for increased thermal cycling capability - AlN substrate with low thermal resistance Potential applications • Traction drives • High-power converters • High-frequency switching application Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description - Datasheet www.infineon.