• Part: FF450R17ME4P_B11
  • Description: IGBT
  • Manufacturer: Infineon
  • Size: 564.00 KB
Download FF450R17ME4P_B11 Datasheet PDF
Infineon
FF450R17ME4P_B11
Features - Low VCEsat - Tvjop=150°C - VCEsatwithpositivetemperaturecoefficient Mechanical Features - Highpowerdensity - Isolatedbaseplate - Standardhousing - Pre-applied Thermal Interface Material Module Label Code Barcode Code128 DMX-Code Contentofthe Code Module Serial Number Module Material Number Production Order Number Datecode(Production Year) Datecode(Production Week) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet .infineon. Pleasereadthe Important Noticeand Warningsattheendofthisdocument V3.1 2017-04-26 IGBT,Wechselrichter/IGBT,Inverter Höchstzulässige Werte/Maximum Rated Values Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom Continuous DCcollectorcurrent TH = 45°C, Tvj max = 175°C Periodischer Kollektor-Spitzenstrom Repetitivepeakcollectorcurrent t P = 1 ms Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VCES IC nom ICRM VGES 1700 450...