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FM25V20A - F-RAM

General Description

The FM25V20A is a 2-Mbit nonvolatile memory employing an advanced ferroelectric process.

A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM.

Key Features

  • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 - High-endurance 10 trillion (1014) read/writes - 121-year data retention (See the Data retention and endurance table) - No delay writes - Advanced high-reliability ferroelectric process.
  • Very fast SPI - Up to 33 MHz frequency - Direct hardware replacement for serial flash and EEPROM - Supports SPI mode 0 (0, 0) and mode 3 (1, 1).
  • Sophisticated write protection scheme - Hardware protect.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FM25V20A 2-Mbit (256 K × 8) Serial (SPI) F-RAM Serial (SPI), 256 K × 8, 33 MHz, extended industrial Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 - High-endurance 10 trillion (1014) read/writes - 121-year data retention (See the Data retention and endurance table) - No delay writes - Advanced high-reliability ferroelectric process • Very fast SPI - Up to 33 MHz frequency - Direct hardware replacement for serial flash and EEPROM - Supports SPI mode 0 (0, 0) and mode 3 (1, 1) • Sophisticated write protection scheme - Hardware protection using the Write Protect (WP) pin - Software protection using Write Disable instruction - Software block protection for 1/4, 1/2, or entire array • Device ID - Manufacturer ID and Product ID • Low power consumpti