Part FP100R07N3E4_B11
Description IGBT
Manufacturer Infineon
Size 845.84 KB
Infineon
FP100R07N3E4_B11

Overview

  • Increasedblockingvoltagecapabilityto650V
  • High Short Circuit Capability, Self Limiting Short CircuitCurrent
  • TrenchIGBT4
  • Tvjop=150°C
  • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures
  • IntegratedNTCtemperaturesensor
  • CopperBasePlate
  • PressFITContactTechnology
  • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:AS approvedby:RS ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 dateofpublication:2013-11-05 revision:2.0 ULapproved(E83335) 1 TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP100R07N3E4_B11 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 70°C, Tvj max = 175°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tv