FS02MR12A8MA2B
Features
- Electrical features
- VDSS = 1200 V
- IDN = 390 A
- New semiconductor material
- silicon carbide
- Low RDS,on
- Low switching losses
- Low Qg and Crss
- Low inductive design
- Tvj,op = 175°C
- Short-time extended operation temperature Tvj,op = 200 °C
- Mechanical features
- 4.2 k V DC 1 second insulation
- High creepage and clearance distances
- pact design
- High power density
- Direct-cooled Pin Fin base plate
- High-performance Si3N4 ceramic
- Guiding elements for PCB and cooler assembly
- Integrated temperature sensing diode
- Press FIT contact technology
- Ro HS pliant, lead-free
- UL 94 V0 module frame
Potential applications
- Automotive applications
- (Hybrid) electrical vehicles (H)EV
- Motor drives
- mercial, construction and agricultural vehicles (CAV)
Product validation
- Qualified according to AQG 324, release no.: 03.1/2021
Description
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