FS100R12KE3 Datasheet PDF

Technische Information / Technical Information IGBT-Module IGBT-modules FS100R12KE3 IGBT,Wechselrichter / IGBT,Inverter Höchstzulässige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C Kollektor-Dauergleichstrom Continuous DC collector current TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 150 Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VCES IC nom IC ICRM Ptot VGES 1200 100 140 200 480 +/-20 V A A A W V Charakteristische Werte / Characteristic Values Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC = 100 A, VGE = 15 V IC = 100 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gate threshold voltage IC = 4,00 mA, VCE = VGE, Tvj = 25°C Gateladung Gate charge VGE = -15 V ... +15 V Interner Gatewiderstand Internal gate resistor Tvj = 25°C E...